1. Leading the Edge: Wafer-scale Epitaxy of Single-crystal, non-Silicon Monolayer Semiconducting Materials with Ultrahigh Mobility
The pursuit of next-generation electronics centers on the identification of viable alternatives to traditional silicon-based materials, prioritizing synthetic scalability, compatibility with existing industrial processes, optimal crystallinity, and, crucially, ultra-high mobility. Chemical vapor deposition (CVD) & Metal-Organic CVD (MOCVD) serve as vital techniques for synthesizing materials by precisely arranging dissimilar atoms into functional molecules. This process facilitates the establishment of a perfect, periodic lattice structure that extends uniformly across the amorphous dielectric substrates, ensuring wafer-scale consistencies in both quality and electronic properties comparable to those achieved through mechanical exfoliation.
Current research initiatives focus on several key areas: (a) lattice orientations; (b) heterogeneous junctions; (c) doping strategies; (d) metal contact optimization; and (e) transfer-free integrated device architectures. These advancements are driving applications in various fields, including but not limited to the AI hardware, Internet of Things (IoT), flexible electronics, and the development of next-generation semiconductor devices.
Collaboration:
Prof. Jeehwan Kim and Prof. Jing Kong at MIT;
Prof. Lance Li at NUS;
Prof. Kosuke Nagashio at UTokyo
Prof. Takeshi Yanagida at UTokyo
Prof. Deep Jariwalla at UPenn;
Prof. Sang-Hoon Bae at the University of Washington, St. Loius;
Prof. Wen-Hao Chang at NCTU, Taiwan;
Prof. Yi-Chia Chou at NTU, Taiwan;
TSMC